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J-GLOBAL ID:201702227675714184
整理番号:17A1447363
抵抗スイッチングメモリデバイスにおける利用のための中空グラフェンナノ構造のトップダウン合成【Powered by NICT】
Top-Down Synthesis of Hollow Graphene Nanostructures for Use in Resistive Switching Memory Devices
著者 (10件):
Anoop Gopinathan
(School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-Dong, Buk-Gu, Gwangju, 61005, South Korea)
,
Kim Tae Yeon
(School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-Dong, Buk-Gu, Gwangju, 61005, South Korea)
,
Lee Hye Jeong
(School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-Dong, Buk-Gu, Gwangju, 61005, South Korea)
,
Panwar Varij
(School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-Dong, Buk-Gu, Gwangju, 61005, South Korea)
,
Panwar Varij
(Department of Electronics & Communication Engineering, Graphic Era University, Clement Town, Dehradun, Uttarakhand, 248002, India)
,
Kwak Jeong Hun
(School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-Dong, Buk-Gu, Gwangju, 61005, South Korea)
,
Heo Yeong-Jae
(School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-Dong, Buk-Gu, Gwangju, 61005, South Korea)
,
Yang Jin-Hoon
(School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-Dong, Buk-Gu, Gwangju, 61005, South Korea)
,
Lee Joo Hyoung
(School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-Dong, Buk-Gu, Gwangju, 61005, South Korea)
,
Jo Ji Young
(School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-Dong, Buk-Gu, Gwangju, 61005, South Korea)
資料名:
Advanced Electronic Materials
(Advanced Electronic Materials)
巻:
3
号:
10
ページ:
ROMBUNNO.201700264
発行年:
2017年
JST資料番号:
W2482A
ISSN:
2199-160X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)