文献
J-GLOBAL ID:201702227711172280
整理番号:17A0412365
大面積真空マイクロエレクトロニクス応用のためのゲート電界エミッタアレイにおけるZnOナノワイヤの集積【Powered by NICT】
Integration of ZnO nanowires in gated field emitter arrays for large-area vacuum microelectronics applications
著者 (8件):
Zhao Long
(State Key Laboratory of Optoelectronic Materials and Technologies, Provincial Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People’s Republic of China)
,
Chen Yuxiang
(State Key Laboratory of Optoelectronic Materials and Technologies, Provincial Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People’s Republic of China)
,
Liu Yuanming
(State Key Laboratory of Optoelectronic Materials and Technologies, Provincial Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People’s Republic of China)
,
Zhang Guofu
(State Key Laboratory of Optoelectronic Materials and Technologies, Provincial Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People’s Republic of China)
,
She Juncong
(State Key Laboratory of Optoelectronic Materials and Technologies, Provincial Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People’s Republic of China)
,
Deng Shaozhi
(State Key Laboratory of Optoelectronic Materials and Technologies, Provincial Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People’s Republic of China)
,
Xu Ningsheng
(State Key Laboratory of Optoelectronic Materials and Technologies, Provincial Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People’s Republic of China)
,
Chen Jun
(State Key Laboratory of Optoelectronic Materials and Technologies, Provincial Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People’s Republic of China)
資料名:
Current Applied Physics
(Current Applied Physics)
巻:
17
号:
1
ページ:
85-91
発行年:
2017年
JST資料番号:
W1579A
ISSN:
1567-1739
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)