文献
J-GLOBAL ID:201702227909657249
整理番号:17A1557653
ScAlMgO_4基板上に成長させたウルツ鉱型ZnOエピ層中の高MgO含有量の達成【Powered by NICT】
Achieving high MgO content in wurtzite ZnO epilayer grown on ScAlMgO4 substrate
著者 (6件):
Wen M.C.
(Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC)
,
Yan T.
(Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, PR China)
,
Chang L.
(Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC)
,
Chou M.M.C.
(Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC)
,
Ye N.
(Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, PR China)
,
Ploog K.H.
(Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
477
ページ:
174-178
発行年:
2017年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)