文献
J-GLOBAL ID:201702228234802064
整理番号:17A0062061
InAlGaN/AlGaN複合障壁を有するGaN系ヘテロ構造の作製【Powered by NICT】
Fabrication of GaN-Based Heterostructures with an InAlGaN/AlGaN Composite Barrier
著者 (9件):
Quan Rudai
(School of Microelectronics, Xidian University)
,
Zhang Jincheng
(School of Microelectronics, Xidian University)
,
Xue Junshuai
(School of Microelectronics, Xidian University)
,
Zhao Yi
(School of Microelectronics, Xidian University)
,
Ning Jing
(School of Microelectronics, Xidian University)
,
Lin Zhiyu
(School of Microelectronics, Xidian University)
,
Zhang Yachao
(School of Microelectronics, Xidian University)
,
Ren Zeyang
(School of Microelectronics, Xidian University)
,
Hao Yue
(School of Microelectronics, Xidian University)
資料名:
Chinese Physics Letters
(Chinese Physics Letters)
巻:
33
号:
8
ページ:
088102-1-088102-4
発行年:
2016年
JST資料番号:
W1191A
ISSN:
0256-307X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)