文献
J-GLOBAL ID:201702228714084897
整理番号:17A0755435
負性静電容量FinFET特性に及ぼす寄生容量と強誘電パラメータの影響【Powered by NICT】
Impact of Parasitic Capacitance and Ferroelectric Parameters on Negative Capacitance FinFET Characteristics
著者 (5件):
Khandelwal Sourabh
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
,
Duarte Juan Pablo
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
,
Khan Asif Islam
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
,
Salahuddin Sayeef
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
,
Hu Chenming
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
38
号:
1
ページ:
142-144
発行年:
2017年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)