文献
J-GLOBAL ID:201702228910217541
整理番号:17A0934969
SbドープSnO_2ベースゾル-ゲル薄膜におけるサブバンド局在状態効果の熱的周波数依存性の研究【Powered by NICT】
Thermal-frequency dependence study of the sub-band localized states effect in Sb-doped SnO2 based sol-gel thin films
著者 (6件):
Ammari A.
(Laboratory of Storage and Valorization of Renewable Energies, Faculty of Chemistry, USTHB, BP 32, 16111 Algiers, Algeria)
,
Ammari A.
(Laboratory of Physical Engineering, Ibn Khaldoun University, BP 78, 14000 Tiaret, Algeria)
,
Bellal B.
(Laboratory of Storage and Valorization of Renewable Energies, Faculty of Chemistry, USTHB, BP 32, 16111 Algiers, Algeria)
,
Zebbar N.
(LCMS, Faculty of Physics, University of Sciences and Technology (USTHB), BP 32, Algiers, Algeria)
,
Benrabah B.
(Laboratory of Physical Engineering, Ibn Khaldoun University, BP 78, 14000 Tiaret, Algeria)
,
Trari M.
(Laboratory of Storage and Valorization of Renewable Energies, Faculty of Chemistry, USTHB, BP 32, 16111 Algiers, Algeria)
資料名:
Thin Solid Films
(Thin Solid Films)
巻:
632
ページ:
66-72
発行年:
2017年
JST資料番号:
B0899A
ISSN:
0040-6090
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)