文献
J-GLOBAL ID:201702228987041220
整理番号:17A0759224
不揮発性抵抗変化型不揮発性メモリデバイスにおける一段階全溶液ベースAu GOコア-シェルナノ球活性層【Powered by NICT】
One-Step All-Solution-Based Au-GO Core-Shell Nanosphere Active Layers in Nonvolatile ReRAM Devices
著者 (8件):
Rani Adila
(Department of Chemistry and Nano Science, Division of Molecular and Life Sciences, College of Natural Sciences, Ewha Womans University, 52, Ewhayeodae-gil, Seodaemun-gu, Seoul, 03760, South Korea)
,
Velusamy Dhinesh Babu
(Department of Materials Science and Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul, 03722, South Korea)
,
Marques Mota Filipe
(Department of Chemistry and Nano Science, Division of Molecular and Life Sciences, College of Natural Sciences, Ewha Womans University, 52, Ewhayeodae-gil, Seodaemun-gu, Seoul, 03760, South Korea)
,
Jang Yoon Hee
(Department of Chemistry and Nano Science, Division of Molecular and Life Sciences, College of Natural Sciences, Ewha Womans University, 52, Ewhayeodae-gil, Seodaemun-gu, Seoul, 03760, South Korea)
,
Kim Richard Hahnkee
(Department of Materials Science and Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul, 03722, South Korea)
,
Park Cheolmin
(Department of Materials Science and Engineering, Yonsei University, 50, Yonsei-ro, Seodaemun-gu, Seoul, 03722, South Korea)
,
Kim Dong Ha
(Department of Chemistry and Nano Science, Division of Molecular and Life Sciences, College of Natural Sciences, Ewha Womans University, 52, Ewhayeodae-gil, Seodaemun-gu, Seoul, 03760, South Korea)
,
Kim Dong Ha
(Division of Chemical Engineering and Materials Science, College of Engineering, Ewha Womans University, 52, Ewhayeodae-gil, Seodaemun-gu, Seoul, 03760, South Korea)
資料名:
Advanced Functional Materials
(Advanced Functional Materials)
巻:
27
号:
10
ページ:
ROMBUNNO.201604604
発行年:
2017年
JST資料番号:
W1336A
ISSN:
1616-301X
CODEN:
AFMDC6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)