文献
J-GLOBAL ID:201702229176595916
整理番号:17A0055487
AlGaN/GaNヘテロ接合を基にしたデバイスにおける自己加熱と電気的ストレス誘起分極の影響【Powered by NICT】
The effect of self-heating and electrical stress induced polarization in AlGaN/GaN heterojunction based devices
著者 (7件):
Ahmeda K.
(Electronic Systems Design Centre (ESDC), College of Engineering, Swansea University Bay Campus, Fabian Way, Swansea, SA1 8EN, Wales, United Kingdom)
,
Faramehr S.
(Electronic Systems Design Centre (ESDC), College of Engineering, Swansea University Bay Campus, Fabian Way, Swansea, SA1 8EN, Wales, United Kingdom)
,
Igic P.
(Electronic Systems Design Centre (ESDC), College of Engineering, Swansea University Bay Campus, Fabian Way, Swansea, SA1 8EN, Wales, United Kingdom)
,
Kalna K.
(Electronic Systems Design Centre (ESDC), College of Engineering, Swansea University Bay Campus, Fabian Way, Swansea, SA1 8EN, Wales, United Kingdom)
,
Duffy S. J.
(Department of Electronics and Electrical Engineering, Liverpool John Moores University, Byrom Street, L3 3AF, Liverpool, United Kingdom)
,
Soltani A.
(LN2, Sherbrooke, Canada and IEMN, Lille, France)
,
Benbakhti B.
(Department of Electronics and Electrical Engineering, Liverpool John Moores University, Byrom Street, L3 3AF, Liverpool, United Kingdom)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
ASDAM
ページ:
203-206
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)