文献
J-GLOBAL ID:201702229654714168
整理番号:17A1488487
SiリッチCrSi抵抗膜のTCRを減少させる深準位不純物としてのM(MNi, Mo, NiMo)の機構【Powered by NICT】
Mechanism on M (MNi, Mo, NiMo) as deep level impurity reducing the TCR of Si-rich CrSi resistive films
著者 (12件):
Wang X.Y.
(School of Microelectronics, Tianjin University, Tianjin 300072, China)
,
Wang X.Y.
(Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin 300072, China)
,
Liu Y.P.
(School of Microelectronics, Tianjin University, Tianjin 300072, China)
,
Liu Y.P.
(Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin 300072, China)
,
Ding B.N.
(School of Microelectronics, Tianjin University, Tianjin 300072, China)
,
Ding B.N.
(Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin 300072, China)
,
Li M.X.
(School of Microelectronics, Tianjin University, Tianjin 300072, China)
,
Li M.X.
(Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin 300072, China)
,
Chen T.N.
(School of Microelectronics, Tianjin University, Tianjin 300072, China)
,
Chen T.N.
(Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin 300072, China)
,
Zhu X.T.
(School of Microelectronics, Tianjin University, Tianjin 300072, China)
,
Zhu X.T.
(Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin 300072, China)
資料名:
Superlattices and Microstructures
(Superlattices and Microstructures)
巻:
109
ページ:
217-228
発行年:
2017年
JST資料番号:
D0600B
ISSN:
0749-6036
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)