文献
J-GLOBAL ID:201702230093417807
整理番号:17A0852403
a-InGaZnO薄膜トランジスタの不動態化層におけるH_2O分子の役割【Powered by NICT】
Role of H2O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors
著者 (13件):
Chien Yu-Chieh
(Department of Materials and Optoelectronic, Sun Yat-Sen University, Kaohsiung, Taiwan)
,
Chang Ting-Chang
(Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan)
,
Chiang Hsiao-Cheng
(Department of Materials and Optoelectronic, Sun Yat-Sen University, Kaohsiung, Taiwan)
,
Chen Hua-Mao
(Department of Photonics, Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan)
,
Tsao Yu-Ching
(Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan)
,
Shih Chih-Cheng
(Department of Materials and Optoelectronic, Sun Yat-Sen University, Kaohsiung, Taiwan)
,
Chen Bo-Wei
(Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan)
,
Liao Po-Yung
(Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan)
,
Chu Ting-Yang
(Department of Materials and Optoelectronic, Sun Yat-Sen University, Kaohsiung, Taiwan)
,
Yang Yi-Chieh
(Department of Materials and Optoelectronic, Sun Yat-Sen University, Kaohsiung, Taiwan)
,
Hung Yu-Ju
(Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan)
,
Tsai Tsung-Ming
(Department of Materials and Optoelectronic, Sun Yat-Sen University, Kaohsiung, Taiwan)
,
Chang Kuan-Chang
(School of Electronic and Computer Engineering, Peking University, Beijing, China)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
38
号:
4
ページ:
469-472
発行年:
2017年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)