文献
J-GLOBAL ID:201702230108517367
整理番号:17A0214165
垂直suspendedチャネルを持つラップゲート型CNT-FETの初めての実証【Powered by NICT】
First demonstration of a wrap-gated CNT-FET with vertically-suspended channels
著者 (15件):
Lee Dongil
(School of Electrical Engineering, KAIST, Daejeon 34141, Korea)
,
Lee Byung-Hyun
(School of Electrical Engineering, KAIST, Daejeon 34141, Korea)
,
Yoon Jinsu
(Kookmin University, Seoul, 02707, Korea)
,
Choi Bongsik
(Kookmin University, Seoul, 02707, Korea)
,
Park Jun-Young
(School of Electrical Engineering, KAIST, Daejeon 34141, Korea)
,
Ahn Dae-Chul
(School of Electrical Engineering, KAIST, Daejeon 34141, Korea)
,
Kim Choong-Ki
(School of Electrical Engineering, KAIST, Daejeon 34141, Korea)
,
Hwang Byeong-Woon
(School of Electrical Engineering, KAIST, Daejeon 34141, Korea)
,
Jeon Seung-Bae
(School of Electrical Engineering, KAIST, Daejeon 34141, Korea)
,
Ahn Hyun Jun
(School of Electrical Engineering, KAIST, Daejeon 34141, Korea)
,
Seol Myeong-Lok
(NASA Ames Research Center, Moffett Field, CA 94035, USA)
,
Kang Min-Ho
(National Nanofab Center, Daejeon 34141, Korea)
,
Cho Byung Jin
(School of Electrical Engineering, KAIST, Daejeon 34141, Korea)
,
Choi Sung-Jin
(Kookmin University, Seoul, 02707, Korea)
,
Choi Yang-Kyu
(School of Electrical Engineering, KAIST, Daejeon 34141, Korea)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
5.2.1-5.2.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)