文献
J-GLOBAL ID:201702230350477372
整理番号:17A0214254
高温イオン注入によるバルクSi FinFETのCMOS特性の改善【Powered by NICT】
Improvement of the CMOS characteristics of bulk Si FinFETs by high temperature ion implantation
著者 (18件):
Kikuchi Y.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Hopf T.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Mannaert G.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Tao Z.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Waite A.
(Applied Materials, 35 Dory Rd, Gloucester, MA 01930 USA)
,
Cournoyer J.
(Applied Materials, 35 Dory Rd, Gloucester, MA 01930 USA)
,
Borniquel J.
(Applied Materials, Leuven, Belgium)
,
Schreutelkamp R.
(Applied Materials, Leuven, Belgium)
,
Ritzenthaler R.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Kim M. S.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Kubicek S.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Chew S. A.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Devriendt K.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Schram T.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Demuynck S.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Variam N.
(Applied Materials, 35 Dory Rd, Gloucester, MA 01930 USA)
,
Horiguchi N.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
,
Mocuta D.
(imec, Kapeldreef 75, B-3001 Leuven, Belgium)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
17.5.1-17.5.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)