文献
J-GLOBAL ID:201702230369456083
整理番号:17A0057903
リセスゲートによる縮尺AlGaN/GaNH FETの改善された性能【Powered by NICT】
Improved performance of scaled AlGaN/GaN HFETs by recessed gate
著者 (6件):
Lv Yuanjie
(National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China)
,
Song Xubo
(National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China)
,
Zhang Zhirong
(National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China)
,
Tan Xin
(National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China)
,
Fang Yulong
(National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China)
,
Feng Zhihong
(National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
SSLChina: IFWS
ページ:
107-109
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)