文献
J-GLOBAL ID:201702230628264398
整理番号:17A1273415
トレンチ/平面ゲート構造を用いた低逆方向転送容量を持つ高速パワーMOSFET【Powered by NICT】
High-speed power MOSFET with low reverse transfer capacitance using a trench/planar gate architecture
著者 (5件):
Wei Jin
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong)
,
Wang Yuru
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong)
,
Zhang Meng
(Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University, Hong Kong)
,
Jiang Huaping
(Dynex Semiconductor Ltd, Lincoln, UK)
,
Chen Kevin J.
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
ISPSD
ページ:
331-334
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)