文献
J-GLOBAL ID:201702230667456545
整理番号:17A1824577
ゲートとチャネル設計二重ゲートMOSFETのサブしきい値スイングの解析モデル【Powered by NICT】
Analytical model of subthreshold swing of a gate and channel engineered double gate MOSFET
著者 (3件):
Mahmud Md. Arafat
(Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh)
,
Mahmud Md. Arafat
(School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, Australia)
,
Subrina Samia
(Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh)
資料名:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
(International Journal of Numerical Modelling: Electronic Networks, Devices and Fields)
巻:
30
号:
6
ページ:
ROMBUNNO.2235
発行年:
2017年
JST資料番号:
T0597A
ISSN:
0894-3370
CODEN:
IJNFEX
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)