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J-GLOBAL ID：201702230812019214
整理番号：17A0214252
分離したバルクフィン上の完全に金属ソースとドレイン形成により可能になった超低寄生抵抗とFOI FinFET【Powered by NICT】
FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin
Zhang Qingzhu
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Yin Huaxiang
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Luo Jun
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Yang Hong
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Meng Lingkuan
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Li Yudong
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Wu Zhenhua
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Zhang Yanbo
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Zhang Yongkui
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Qin Changliang
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Li Junjie
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Gao Jianfeng
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Wang Guilei
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Xiong Wenjuan
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Xiang Jinjuan
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Zhou Zhangyu
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Mao Shujian
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Xu Gaobo
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Liu Jinbiao
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Qu Yang
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Yang Tao
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Li Junfeng
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Xu Qiuxia
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Yan Jiang
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Zhu Huilong
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Zhao Chao
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
,
Ye Tianchun
(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, 100029, China)
資料名：
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻： 2016 号： IEDM ページ： 17.3.1-17.3.4 発行年： 2016年
JST資料番号： W2441A 資料種別： 会議録 (C)
記事区分： 原著論文 発行国： アメリカ合衆国 (USA) 言語： 英語 (EN)
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