文献
J-GLOBAL ID:201702230962655164
整理番号:17A0830151
nanodashesを用いたGaNにおける転位低減のための強化された横方向成長の設計と製作【Powered by NICT】
Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes
著者 (10件):
Le Boulbar E.D.
(Department of Electronic and Electrical Engineering, University of Bath, BA2 7AY, UK)
,
Priesol J.
(Institute of Electronics and Photonics, Slovak University of Technology, Ilkovicova 3, 81219 Bratislava, Slovakia)
,
Nouf-Allehiani M.
(Department of Physics, SUPA, Strathclyde University, Glasgow, G4 0NG, UK)
,
Naresh-Kumar G.
(Department of Physics, SUPA, Strathclyde University, Glasgow, G4 0NG, UK)
,
Fox S.
(Department of Electronic and Electrical Engineering, University of Bath, BA2 7AY, UK)
,
Trager-Cowan C.
(Department of Physics, SUPA, Strathclyde University, Glasgow, G4 0NG, UK)
,
Satka A.
(Institute of Electronics and Photonics, Slovak University of Technology, Ilkovicova 3, 81219 Bratislava, Slovakia)
,
Satka A.
(International Laser Centre, Ilkovicova 3, 84104 Bratislava, Slovakia)
,
Allsopp D.W.E.
(Department of Electronic and Electrical Engineering, University of Bath, BA2 7AY, UK)
,
Shields P.A.
(Department of Electronic and Electrical Engineering, University of Bath, BA2 7AY, UK)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
466
ページ:
30-38
発行年:
2017年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)