文献
J-GLOBAL ID:201702231347134756
整理番号:17A1181669
3Dモノリシック集積化により作製したSiGe OI FinFET上のInGaAs置換金属ゲート(RMG)FETのDCおよびRF特性化【Powered by NICT】
DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
著者 (9件):
Deshpande V.
(IBM Zurich Research Laboratory, Saeumerstrasse 4, CH-8803 Rueschlikon, Switzerland)
,
Djara V.
(IBM Zurich Research Laboratory, Saeumerstrasse 4, CH-8803 Rueschlikon, Switzerland)
,
O’Connor E.
(IBM Zurich Research Laboratory, Saeumerstrasse 4, CH-8803 Rueschlikon, Switzerland)
,
Hashemi P.
(IBM T.J. Watson Research Center, 1101 Kitchawan Rd., Route 134, Yorktown Heights, NY, USA)
,
Balakrishnan K.
(IBM T.J. Watson Research Center, 1101 Kitchawan Rd., Route 134, Yorktown Heights, NY, USA)
,
Caimi D.
(IBM Zurich Research Laboratory, Saeumerstrasse 4, CH-8803 Rueschlikon, Switzerland)
,
Sousa M.
(IBM Zurich Research Laboratory, Saeumerstrasse 4, CH-8803 Rueschlikon, Switzerland)
,
Czornomaz L.
(IBM Zurich Research Laboratory, Saeumerstrasse 4, CH-8803 Rueschlikon, Switzerland)
,
Fompeyrine J.
(IBM Zurich Research Laboratory, Saeumerstrasse 4, CH-8803 Rueschlikon, Switzerland)
資料名:
Solid-State Electronics
(Solid-State Electronics)
巻:
128
ページ:
87-91
発行年:
2017年
JST資料番号:
H0225A
ISSN:
0038-1101
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)