文献
J-GLOBAL ID:201702232440026623
整理番号:17A1164736
GaNナノフラワーを用いた高応答性自己駆動紫外光検出器【Powered by NICT】
A Highly Responsive Self-Driven UV Photodetector Using GaN Nanoflowers
著者 (7件):
Aggarwal Neha
(Advanced Materials and Devices Group, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K. S. Krishnan Road, New Delhi, 110012, India)
,
Krishna Shibin
(Advanced Materials and Devices Group, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K. S. Krishnan Road, New Delhi, 110012, India)
,
Sharma Alka
(Quantum Phenomena and Applications, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K. S. Krishnan Road, New Delhi, 110012, India)
,
Goswami Lalit
(Advanced Materials and Devices Group, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K. S. Krishnan Road, New Delhi, 110012, India)
,
Kumar Dinesh
(Quantum Phenomena and Applications, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K. S. Krishnan Road, New Delhi, 110012, India)
,
Husale Sudhir
(Quantum Phenomena and Applications, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K. S. Krishnan Road, New Delhi, 110012, India)
,
Gupta Govind
(Advanced Materials and Devices Group, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K. S. Krishnan Road, New Delhi, 110012, India)
資料名:
Advanced Electronic Materials
(Advanced Electronic Materials)
巻:
3
号:
5
ページ:
ROMBUNNO.201700036
発行年:
2017年
JST資料番号:
W2482A
ISSN:
2199-160X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)