文献
J-GLOBAL ID:201702232917535331
整理番号:17A1254720
自由Ti/TiO_2~ RRAM素子の形成における多準位抵抗スイッチングの実験とシミュレーション【Powered by NICT】
Experiments and simulation of multilevel resistive switching in forming free Ti/TiO2-x RRAM devices
著者 (5件):
Bousoulas P.
(Department of Applied Physics, National Technical University of Athens, Heroon Polytechniou 9, 15780, Greece)
,
Giannopoulos I.
(Department of Applied Physics, National Technical University of Athens, Heroon Polytechniou 9, 15780, Greece)
,
Asenov P.
(Department of Applied Physics, National Technical University of Athens, Heroon Polytechniou 9, 15780, Greece)
,
Karageorgiou I.
(Department of Applied Physics, National Technical University of Athens, Heroon Polytechniou 9, 15780, Greece)
,
Tsoukalas D.
(Department of Applied Physics, National Technical University of Athens, Heroon Polytechniou 9, 15780, Greece)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
EUROSOI-ULIS
ページ:
172-175
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)