文献
J-GLOBAL ID:201702233124305160
整理番号:17A0124427
Xバンド逆F級GaN内部整合電力増幅器【Powered by NICT】
X-band inverse class-F GaN internally-matched power amplifier
著者 (8件):
Zhao Bochao
(School of Microelectronics, Xidian University)
,
Lu Yang
(School of Microelectronics, Xidian University)
,
Han Wenzhe
(School of Microelectronics, Xidian University)
,
Zheng Jiaxin
(School of Advanced Material and Nanotechnology, Xidian University)
,
Zhang Hengshuang
(School of Microelectronics, Xidian University)
,
Ma Peijun
(School of Microelectronics, Xidian University)
,
Ma Xiaohua
(School of Advanced Material and Nanotechnology, Xidian University)
,
Hao Yue
(School of Microelectronics, Xidian University)
資料名:
Chinese Physics B
(Chinese Physics B)
巻:
25
号:
9
ページ:
097306-1-097306-5
発行年:
2016年
JST資料番号:
W1539A
ISSN:
1674-1056
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)