文献
J-GLOBAL ID:201702233316600683
整理番号:17A0214345
CVD成長させたGe/strained Ge_0 91Sn_0 0.09/Ge量子井戸p-MOSFETの記録的な高移動度(428cm~2/V s)【Powered by NICT】
Record high mobility (428cm2/V-s) of CVD-grown Ge/strained Ge0.91Sn0.09/Ge quantum well p-MOSFETs
著者 (14件):
Huang Yu-Shiang
(Graduate Institute of Electronics Engineering)
,
Huang Chih-Hsiung
(Graduate Institute of Electronics Engineering)
,
Lu Fang-Liang
(Graduate Institute of Electronics Engineering)
,
Lin Chung-Yi
(Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan)
,
Ye Hung-Yu
(Graduate Institute of Electronics Engineering)
,
Wong I-Hsieh
(Graduate Institute of Electronics Engineering)
,
Jan Sun-Rong
(Graduate Institute of Electronics Engineering)
,
Lan Huang-Siang
(Graduate Institute of Electronics Engineering)
,
Liu C. W.
(Graduate Institute of Electronics Engineering)
,
Huang Yi-Chiau
(Applied Materials Inc, Sunnyvale, California, United States)
,
Chung Hua
(Applied Materials Inc, Sunnyvale, California, United States)
,
Chang Chorng-Ping
(Applied Materials Inc, Sunnyvale, California, United States)
,
Chu Schubert S.
(Applied Materials Inc, Sunnyvale, California, United States)
,
Kuppurao Satheesh
(Applied Materials Inc, Sunnyvale, California, United States)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
33.1.1-33.1.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)