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J-GLOBAL ID:201702233589330932
整理番号:17A1024368
SIPOSピラーを持つ超接合UMOSFET TCADシミュレーション研究による超接合シリコン限界の打破【Powered by NICT】
A Superjunction U-MOSFET With SIPOS Pillar Breaking Superjunction Silicon Limit by TCAD Simulation Study
著者 (5件):
Cao Zhen
(Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China)
,
Duan Baoxing
(Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China)
,
Shi Tongtong
(Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China)
,
Yuan Song
(Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China)
,
Yang Yintang
(Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
38
号:
6
ページ:
794-797
発行年:
2017年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)