文献
J-GLOBAL ID:201702234461954044
整理番号:17A0027891
水素検出用の格子付きゲートPt/SiO2/Si MOSセンサーへのRFプラズマの効果
Effect of RF Plasma on Gridded Gate Pt/SiO2/Si MOS Sensor for Detection of Hydrogen
著者 (5件):
Kumar Vinod
(Department of Electronics and Communication Engineering, Raj Kumar Goel Institute of Technology, Ghaziabad, India)
,
Sunny
(Department of Electronics and Communication Engineering, Indian Institute of Information Technology, Allahabad, India)
,
Mishra V. N.
(Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi, Varanasi, India)
,
Dwivedi R.
(Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi, Varanasi, India)
,
Das R. R.
(Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi, Varanasi, India)
資料名:
IEEE Sensors Journal
(IEEE Sensors Journal)
巻:
16
号:
16
ページ:
6205-6212
発行年:
2016年
JST資料番号:
W1318A
ISSN:
1530-437X
CODEN:
ISJEAZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)