文献
J-GLOBAL ID:201702235454240685
整理番号:17A0442880
GaCl_3を用いたトリ-ハロゲン化物気相エピタクシーによるアモノサーマル種子上の厚い非極性m面と半極性(10 <span style=text-decoration:overline>1</span> <span style=text-decoration:overline>1</span>)GaN【Powered by NICT】
Thick nonpolar m-plane and semipolar ( 10 <span style=text-decoration:overline>1</span> <span style=text-decoration:overline>1</span> ) GaN on an ammonothermal seed by tri-halide vapor-phase epitaxy using GaCl<sub>3</sub>
著者 (7件):
Iso Kenji
(Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan)
,
Matsuda Karen
(Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan)
,
Takekawa Nao
(Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan)
,
Hikida Kazuhiro
(Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan)
,
Hayashida Naoto
(Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan)
,
Murakami Hisashi
(Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan)
,
Koukitu Akinori
(Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
461
ページ:
25-29
発行年:
2017年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)