文献
J-GLOBAL ID:201702235869322230
整理番号:17A0318066
チャネル幅の起源はグラフェン電界効果トランジスタの電界効果移動度依存性【Powered by NICT】
Origin of the channel width dependent field effect mobility of graphene field effect transistors
著者 (9件):
Lee Young Gon
(Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 61005, Republic of Korea)
,
Lim Sung Kwan
(Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 61005, Republic of Korea)
,
Kang Chang Goo
(Advanced Radiation Detection Instrument and Sensor Laboratory, Korea Atomic Energy Research Institute, 29 Geumgu-Gil, Jeongeup-Si, Jeollabuk-Do 56212, Republic of Korea)
,
Kim Yun Ji
(Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 61005, Republic of Korea)
,
Choi Doo Hua
(Division of Quantum Phases and Devices, Department of Physics, Konkuk University, 120 Neungdong-ro, Gwangjin-gu, Seoul 05029, Republic of Korea)
,
Chung Hyun-Jong
(Division of Quantum Phases and Devices, Department of Physics, Konkuk University, 120 Neungdong-ro, Gwangjin-gu, Seoul 05029, Republic of Korea)
,
Choi Rino
(School of Materials Science and Engineering, Inha University, 100 Inha-ro, Nam-gu, Incheon 22212, Republic of Korea)
,
Lee Byoung Hun
(Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 61005, Republic of Korea)
,
Lee Byoung Hun
(Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 61005, Republic of Korea)
資料名:
Microelectronic Engineering
(Microelectronic Engineering)
巻:
163
ページ:
55-59
発行年:
2016年
JST資料番号:
C0406B
ISSN:
0167-9317
CODEN:
MIENEF
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)