文献
J-GLOBAL ID:201702235982279869
整理番号:17A0055497
HfO_2~をベースにした抵抗スイッチングメモリ構造におけるオゾン前処理の影響【Powered by NICT】
The influence of ozone pre-treatment in HfO2-based resistive switching memory structures
著者 (4件):
Benko P.
(Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Ilkovic∨ova 3, 812 19 Bratislava, Slovakia)
,
Mikolasek M.
(Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Ilkovic∨ova 3, 812 19 Bratislava, Slovakia)
,
Harmatha L.
(Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Ilkovic∨ova 3, 812 19 Bratislava, Slovakia)
,
Frohlich K.
(Slovak Academy of Sciences, Institute of Electrical Engineering, Du ́bravska ́ cesta 9, 841 04 Bratislava, Slovakia)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
ASDAM
ページ:
243-246
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)