文献
J-GLOBAL ID:201702236325742055
整理番号:17A1169730
シリコン中の光活性化Cu欠陥の特性評価:金属析出物の再結合活性との比較【Powered by NICT】
Characterization of light-activated Cu defects in silicon: Comparison with the recombination activity of metallic precipitates
著者 (5件):
Inglese Alessandro
(Department of Electronics and Nanoengineering, Aalto University, 02150 Espoo, Finland)
,
Vahlman Henri
(Department of Electronics and Nanoengineering, Aalto University, 02150 Espoo, Finland)
,
Kwapil Wolfram
(Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg im Breisgau, Germany)
,
Schon Jonas
(Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg im Breisgau, Germany)
,
Savin Hele
(Department of Electronics and Nanoengineering, Aalto University, 02150 Espoo, Finland)
資料名:
Physica Status Solidi. C. Current Topics in Solid State Physics
(Physica Status Solidi. C. Current Topics in Solid State Physics)
巻:
14
号:
7
ページ:
ROMBUNNO.201700103
発行年:
2017年
JST資料番号:
W1400A
ISSN:
1862-6351
CODEN:
PSSCGL
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)