文献
J-GLOBAL ID:201702236533998038
整理番号:17A0316965
薄い窒化チタンキャップ層を持つサブ-1nm等価酸化膜厚HK/MG nMOSFETに及ぼすチャネルホットキャリアストレスのための正確な寿命予測【Powered by NICT】
Accurate lifetime prediction for channel hot carrier stress on sub-1nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer
著者 (14件):
Luo Weichun
(Key Laboratory of MicroElectronics Devices & Integrated Technology, Institute of Mi-croElectronics of Chinese Academy of Sciences, Beijing 100029, China)
,
Yang Hong
(Key Laboratory of MicroElectronics Devices & Integrated Technology, Institute of Mi-croElectronics of Chinese Academy of Sciences, Beijing 100029, China)
,
Wang Wenwu
(Key Laboratory of MicroElectronics Devices & Integrated Technology, Institute of Mi-croElectronics of Chinese Academy of Sciences, Beijing 100029, China)
,
Xu Yefeng
(Key Laboratory of MicroElectronics Devices & Integrated Technology, Institute of Mi-croElectronics of Chinese Academy of Sciences, Beijing 100029, China)
,
Tang Bo
(Key Laboratory of MicroElectronics Devices & Integrated Technology, Institute of Mi-croElectronics of Chinese Academy of Sciences, Beijing 100029, China)
,
Ren Shangqing
(Key Laboratory of MicroElectronics Devices & Integrated Technology, Institute of Mi-croElectronics of Chinese Academy of Sciences, Beijing 100029, China)
,
Xu Hao
(Key Laboratory of MicroElectronics Devices & Integrated Technology, Institute of Mi-croElectronics of Chinese Academy of Sciences, Beijing 100029, China)
,
Wang Yanrong
(Key Laboratory of MicroElectronics Devices & Integrated Technology, Institute of Mi-croElectronics of Chinese Academy of Sciences, Beijing 100029, China)
,
Qi Luwei
(Key Laboratory of MicroElectronics Devices & Integrated Technology, Institute of Mi-croElectronics of Chinese Academy of Sciences, Beijing 100029, China)
,
Yan Jiang
(Key Laboratory of MicroElectronics Devices & Integrated Technology, Institute of Mi-croElectronics of Chinese Academy of Sciences, Beijing 100029, China)
,
Zhu Huilong
(Key Laboratory of MicroElectronics Devices & Integrated Technology, Institute of Mi-croElectronics of Chinese Academy of Sciences, Beijing 100029, China)
,
Zhao Chao
(Key Laboratory of MicroElectronics Devices & Integrated Technology, Institute of Mi-croElectronics of Chinese Academy of Sciences, Beijing 100029, China)
,
Chen Dapeng
(Key Laboratory of MicroElectronics Devices & Integrated Technology, Institute of Mi-croElectronics of Chinese Academy of Sciences, Beijing 100029, China)
,
Ye Tianchun
(Key Laboratory of MicroElectronics Devices & Integrated Technology, Institute of Mi-croElectronics of Chinese Academy of Sciences, Beijing 100029, China)
資料名:
Microelectronics Reliability
(Microelectronics Reliability)
巻:
62
ページ:
70-73
発行年:
2016年
JST資料番号:
C0530A
ISSN:
0026-2714
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)