文献
J-GLOBAL ID:201702236626894090
整理番号:17A0591724
浮遊体Si/SiGe pMOSFETにおけるゲートバイアス依存反転電荷の考察による有効移動度の抽出に対する改善した技法
Improved Technique for Extraction of Effective Mobility by Considering Gate Bias-Dependent Inversion Charges in a Floating-Body Si/SiGe pMOSFET
著者 (14件):
BAE Hagyoul
(Korea Advanced Inst. Sci. and Technol., Daejeon, KOR)
,
BANG Tewook
(Korea Advanced Inst. Sci. and Technol., Daejeon, KOR)
,
KIM Choong-Ki
(Korea Advanced Inst. Sci. and Technol., Daejeon, KOR)
,
HUR Jae
(Korea Advanced Inst. Sci. and Technol., Daejeon, KOR)
,
KIM Seyeob
(Korea Advanced Inst. Sci. and Technol., Daejeon, KOR)
,
JEON Chang-Hoon
(Korea Advanced Inst. Sci. and Technol., Daejeon, KOR)
,
PARK Jun-Young
(Korea Advanced Inst. Sci. and Technol., Daejeon, KOR)
,
AHN Dae-Chul
(Korea Advanced Inst. Sci. and Technol., Daejeon, KOR)
,
KIM Gun-Hee
(Korea Advanced Inst. Sci. and Technol., Daejeon, KOR)
,
SON Yunik
(SK Hynix Semiconductor Inc., Icheon, KOR)
,
LEE Jae-Hoon
(SK Hynix Semiconductor Inc., Icheon, KOR)
,
KIM Yong-Taik
(SK Hynix Semiconductor Inc., Icheon, KOR)
,
RYU Seong-Wan
(SK Hynix Semiconductor Inc., Icheon, KOR)
,
CHOI Yang-Kyu
(Korea Advanced Inst. Sci. and Technol., Daejeon, KOR)
資料名:
Journal of Nanoscience and Nanotechnology
(Journal of Nanoscience and Nanotechnology)
巻:
17
号:
5
ページ:
3247-3250
発行年:
2017年05月
JST資料番号:
W1351A
ISSN:
1533-4880
CODEN:
JNNOAR
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)