文献
J-GLOBAL ID:201702236662407262
整理番号:17A0590236
高ソーラブラインド紫外光応答性を有する選択領域堆積n-Al0.5Ga0.5Nチャンネル電界効果トランジスタ
Selective area deposited n-Al0.5Ga0.5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity
著者 (7件):
Muhtadi S.
(Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia South Carolina 29208, USA)
,
Hwang S.
(Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia South Carolina 29208, USA)
,
Coleman A.
(Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia South Carolina 29208, USA)
,
Asif F.
(Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia South Carolina 29208, USA)
,
Lunev A.
(Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia South Carolina 29208, USA)
,
Chandrashekhar M. V. S.
(Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia South Carolina 29208, USA)
,
Khan A.
(Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia South Carolina 29208, USA)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
110
号:
17
ページ:
171104-171104-4
発行年:
2017年04月24日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)