文献
J-GLOBAL ID:201702236672602773
整理番号:17A1832147
容易なドーピングによるハイブリッド化した局所的そして電荷移動励起状態と優れたOLED性能の達成【Powered by NICT】
Achieving Hybridized Local and Charge-Transfer Excited State and Excellent OLED Performance Through Facile Doping
著者 (12件):
Yuan Wang Zhang
(Shanghai Key Lab of Electrical Insulation and Thermal Aging, Shanghai Electrochemical Energy Devices Research Center, School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, No. 800 Dongchuan Rd., Minhang District, Shanghai, 200240, P. R. China)
,
Bin Xin
(Shanghai Key Lab of Electrical Insulation and Thermal Aging, Shanghai Electrochemical Energy Devices Research Center, School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, No. 800 Dongchuan Rd., Minhang District, Shanghai, 200240, P. R. China)
,
Chen Gan
(Shanghai Key Lab of Electrical Insulation and Thermal Aging, Shanghai Electrochemical Energy Devices Research Center, School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, No. 800 Dongchuan Rd., Minhang District, Shanghai, 200240, P. R. China)
,
He Zihan
(Shanghai Key Lab of Electrical Insulation and Thermal Aging, Shanghai Electrochemical Energy Devices Research Center, School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, No. 800 Dongchuan Rd., Minhang District, Shanghai, 200240, P. R. China)
,
Liu Jun
(Engineering Lab for TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, No. 800 Dongchuan Rd., Minhang District, Shanghai, 200240, P. R. China)
,
Ma Huili
(Key Laboratory of Organic OptoElectronics and Molecular Engineering, Department of Chemistry, Tsinghua University, Zhongguancun Street, Haidian District, Beijing, 100084, P. R. China)
,
Peng Qian
(Institute of Chemistry, Chinese Academy of Sciences, Zhongguancun North First Street 2, Haidian District, Beijing, 100190, P. R. China)
,
Wei Bingwu
(Engineering Lab for TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, No. 800 Dongchuan Rd., Minhang District, Shanghai, 200240, P. R. China)
,
Gong Yongyang
(Shanghai Key Lab of Electrical Insulation and Thermal Aging, Shanghai Electrochemical Energy Devices Research Center, School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, No. 800 Dongchuan Rd., Minhang District, Shanghai, 200240, P. R. China)
,
Lu Yawei
(Shanghai Key Lab of Electrical Insulation and Thermal Aging, Shanghai Electrochemical Energy Devices Research Center, School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, No. 800 Dongchuan Rd., Minhang District, Shanghai, 200240, P. R. China)
,
He Gufeng
(Engineering Lab for TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, No. 800 Dongchuan Rd., Minhang District, Shanghai, 200240, P. R. China)
,
Zhang Yongming
(Shanghai Key Lab of Electrical Insulation and Thermal Aging, Shanghai Electrochemical Energy Devices Research Center, School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, No. 800 Dongchuan Rd., Minhang District, Shanghai, 200240, P. R. China)
資料名:
Advanced Optical Materials
(Advanced Optical Materials)
巻:
5
号:
21
ページ:
ROMBUNNO.201700466
発行年:
2017年
JST資料番号:
W2486A
ISSN:
2195-1071
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)