文献
J-GLOBAL ID:201702236741502535
整理番号:17A0057897
AlGaN/GaNヘテロ接合FETのための窒化物不動態化における浅い表面トラップと分極電荷の役割【Powered by NICT】
Role of shallow surface traps and polarization charges in nitride-based passivation for AlGaN/GaN heterojunction FET
著者 (6件):
Yang Song
(The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong)
,
Tang Zhikai
(The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong)
,
Lu Yunyou
(The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong)
,
Jiang Qimeng
(The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong)
,
Zhang Anping
(Xi’an Jiaotong University, 28 Xianning West Road, Xi’an, Shaanxi, China)
,
Chen Kevin J.
(The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
SSLChina: IFWS
ページ:
85-88
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)