文献
J-GLOBAL ID:201702236744782675
整理番号:17A0312195
Pドープけい素リッチけい素nitride/c Siヘテロ接合素子における電子輸送機構に及ぼすSiナノ粒子の影響【Powered by NICT】
Effect of Si nanoparticles on electronic transport mechanisms in P-doped silicon-rich silicon nitride/c-Si heterojunction devices
著者 (9件):
Ma Deng-Hao
(Center of Condensed Matter and Material Physics, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China)
,
Zhang Wei-Jia
(Center of Condensed Matter and Material Physics, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China)
,
Luo Rui-Ying
(Center of Condensed Matter and Material Physics, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China)
,
Jiang Zhao-Yi
(Center of Condensed Matter and Material Physics, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China)
,
Qiang-Ma
(Center of Condensed Matter and Material Physics, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China)
,
Ma Xiao-Bo
(Center of Condensed Matter and Material Physics, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China)
,
Fan Zhi-Qiang
(Center of Condensed Matter and Material Physics, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China)
,
Song Deng-Yuan
(Yingli Solar, 3399 Chaoyang North Street, Baoding, China)
,
Zhang Lei
(Yingli Solar, 3399 Chaoyang North Street, Baoding, China)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
50
ページ:
20-30
発行年:
2016年08月01日
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)