文献
J-GLOBAL ID:201702236864864430
整理番号:17A0750109
SiO_yN_x/SiN_xスタック:高効率と電位分解耐性mcシリコン太陽電池のための有望な表面不動態化層【Powered by NICT】
SiOyNx/SiNx stack: a promising surface passivation layer for high-efficiency and potential-induced degradation resistant mc-silicon solar cells
著者 (9件):
Zhou Chunlan
(The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical, Engineering, Chinese Academy of Science, Beijing, China)
,
Zhu Junjie
(Solar Energy Department, Institute for Energy Technology, Instituttveien 18, 2007, Kjeller, Norway)
,
Zhou Su
(The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical, Engineering, Chinese Academy of Science, Beijing, China)
,
Tang Yehua
(Eoplly New Energy Technology Co., Ltd, Nantong, 226000, China)
,
Foss Sean E.
(Solar Energy Department, Institute for Energy Technology, Instituttveien 18, 2007, Kjeller, Norway)
,
Haug Halvard
(Solar Energy Department, Institute for Energy Technology, Instituttveien 18, 2007, Kjeller, Norway)
,
Nordseth Ornulf
(Solar Energy Department, Institute for Energy Technology, Instituttveien 18, 2007, Kjeller, Norway)
,
Marstein Erik S.
(Solar Energy Department, Institute for Energy Technology, Instituttveien 18, 2007, Kjeller, Norway)
,
Wang Wenjing
(The Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical, Engineering, Chinese Academy of Science, Beijing, China)
資料名:
Progress in Photovoltaics
(Progress in Photovoltaics)
巻:
25
号:
1
ページ:
23-32
発行年:
2017年
JST資料番号:
W0463A
ISSN:
1062-7995
CODEN:
PPHOED
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)