文献
J-GLOBAL ID:201702236933969384
整理番号:17A0323162
新規Ag_3AuSe_2とAg_3AuTe_2半導体の弾性と光電子特性【Powered by NICT】
Elastic and optoelectronic properties of novel Ag3AuSe2 and Ag3AuTe2 semiconductors
著者 (6件):
Faizan M.
(Department of Physics, University of Peshawar, KPK, Pakistan)
,
Murtaza G.
(Materials Modeling Lab, Department of Physics, Islamia College Peshawar, Pakistan)
,
Azam Sikander
(New Technologies - Research Center, University of West Bohemia, Univerzitni 8, 306 14, Pilsen, Czech Republic)
,
Khan Saleem Ayaz
(New Technologies - Research Center, University of West Bohemia, Univerzitni 8, 306 14, Pilsen, Czech Republic)
,
Mahmood Asif
(College of Engineering, Chemical Engineering Department, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi Arabia)
,
Yar Abdullah
(Department of Physics, Kohat University of Science and Technology, Kohat 26000, KhyberPakhtunkhwa, Pakistan)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
52
ページ:
8-15
発行年:
2016年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)