文献
J-GLOBAL ID:201702237309939471
整理番号:17A0644093
ゾル-ゲル法によるチャネル層を有するボトムゲートZnOトランジスタの素子不安定性の研究
Study of device instability of bottom-gate ZnO transistors with sol-gel derived channel layers
著者 (11件):
Yapabandara Kosala
(Department of Physics, Auburn University, Auburn, Alabama 36849)
,
Mirkhani Vahid
(Department of Physics, Auburn University, Auburn, Alabama 36849)
,
Sultan Muhammad Shehzad
(Department of Physics, Auburn University, Auburn, Alabama 36849)
,
Ozden Burcu
(Department of Physics, Auburn University, Auburn, Alabama 36849)
,
Khanal Min P.
(Department of Physics, Auburn University, Auburn, Alabama 36849)
,
Park Minseo
(Department of Physics, Auburn University, Auburn, Alabama 36849)
,
Wang Shiqiang
(Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849)
,
Hamilton Michael C.
(Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849)
,
Chung Yoonsung
(Materials Research and Education Center, Department of Mechanical Engineering, Auburn University, Auburn, Alabama 36849)
,
Kim Dong-Joo
(Materials Research and Education Center, Department of Mechanical Engineering, Auburn University, Auburn, Alabama 36849)
,
Sk Mobbassar Hassan
(Center for Advanced Materials, CAM, Qatar University, Doha 2713, Qatar)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
35
号:
3
ページ:
03D104-03D104-9
発行年:
2017年05月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)