文献
J-GLOBAL ID:201702237635259740
整理番号:17A0057893
自己終端湿式エッチングプロセスのためのAlGaN/GaNヘテロ構造電界効果トランジスタに及ぼすGaN中間層厚さの影響【Powered by NICT】
Effect of Gan interlayer thickness on the Algan/Gan heterostructure field-effect transistors for self-terminated wet etching process
著者 (9件):
Li Liuan
(School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China)
,
He Liang
(School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China)
,
Yang Fan
(School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China)
,
Chen Zijun
(School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China)
,
Zhang Xiaorong
(School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China)
,
He Lei
(School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China)
,
Wu Zhisheng
(School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China)
,
Zhang Baijun
(School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China)
,
Liu Yang
(School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
SSLChina: IFWS
ページ:
68-71
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)