文献
J-GLOBAL ID:201702238579148510
整理番号:17A1548805
強い相分離したInGaN/GaN多重量子井戸二波長LEDにおけるキャリア局在化【Powered by NICT】
Carrier localization in strong phase-separated InGaN/GaN multiple-quantum-well dual-wavelength LEDs
著者 (4件):
Wang Qiang
(School of Science, Qilu University of Technology, Jinan 250353, China)
,
Gao Xingguo
(School of Science, Qilu University of Technology, Jinan 250353, China)
,
Xu Yulong
(School of Science, Qilu University of Technology, Jinan 250353, China)
,
Leng Jiancai
(School of Science, Qilu University of Technology, Jinan 250353, China)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
726
ページ:
460-465
発行年:
2017年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)