文献
J-GLOBAL ID:201702238712729488
整理番号:17A1347672
アニーリングフリーアニールしたHfZrO膜をベースにした強誘電体薄膜トランジスタ【Powered by NICT】
A Ferroelectric Thin Film Transistor Based on Annealing-Free HfZrO Film
著者 (12件):
Li Yuxing
(Institute of Microelectronics, and the Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing, China)
,
Liang Renrong
(Institute of Microelectronics, and the Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing, China)
,
Wang Jiabin
(Institute of Microelectronics, and the Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing, China)
,
Zhang Ying
(Institute of Microelectronics, and the Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing, China)
,
Tian He
(Institute of Microelectronics, and the Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing, China)
,
Liu Houfang
(Institute of Microelectronics, and the Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing, China)
,
Li Songlin
(Institute of Microelectronics, and the Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing, China)
,
Mao Weiquan
(Institute of Microelectronics, and the Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing, China)
,
Pang Yu
(Institute of Microelectronics, and the Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing, China)
,
Li Yutao
(Institute of Microelectronics, and the Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing, China)
,
Yang Yi
(Institute of Microelectronics, and the Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing, China)
,
Ren Tian-Ling
(Institute of Microelectronics, and the Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing, China)
資料名:
IEEE Journal of the Electron Devices Society
(IEEE Journal of the Electron Devices Society)
巻:
5
号:
5
ページ:
378-383
発行年:
2017年
JST資料番号:
W2429A
ISSN:
2168-6734
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)