文献
J-GLOBAL ID:201702239151881222
整理番号:17A0302158
酸化剤としてH_2Oを用いたMOCVDにより成長させたAlドープZnO透明導電層をもつ高性能InGaN/GaN MQW LED【Powered by NICT】
High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H_2O as an oxidizer
著者 (7件):
Lin Jiayong
(School of Electronics and Information Technology, Sun Yat-Sen University)
,
Pei Yanli
(School of Electronics and Information Technology, Sun Yat-Sen University)
,
Zhuo Yi
(School of Electronics and Information Technology, Sun Yat-Sen University)
,
Chen Zimin
(School of Materials Science and Engineering, Sun Yat-Sen University)
,
Hu Ruiqin
(School of Electronics and Information Technology, Sun Yat-Sen University)
,
Cai Guangshuo
(School of Electronics and Information Technology, Sun Yat-Sen University)
,
Wang Gang
(School of Electronics and Information Technology, Sun Yat-Sen University)
資料名:
Chinese Physics B
(Chinese Physics B)
巻:
25
号:
11
ページ:
118506_01-118506_04
発行年:
2016年
JST資料番号:
W1539A
ISSN:
1674-1056
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)