文献
J-GLOBAL ID:201702239530286489
整理番号:17A0470103
増強電流拡がりと光抽出のための高反射率ITO/DBR p型及びバイアホールベースn型コンタクトを備えたGaNベースフリップチップLED【Powered by NICT】
GaN-based flip-chip LEDs with highly reflective ITO/DBR p-type and via hole-based n-type contacts for enhanced current spreading and light extraction
著者 (7件):
Zhou Shengjun
(School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China)
,
Zhou Shengjun
(School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China)
,
Zheng Chenju
(School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China)
,
Lv Jiajiang
(School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China)
,
Gao Yilin
(School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China)
,
Wang Ruiqing
(Shenzhen Top Chip Technology Co., LTD, Shenzhen 518000, China)
,
Liu Sheng
(School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China)
資料名:
Optics & Laser Technology
(Optics & Laser Technology)
巻:
92
ページ:
95-100
発行年:
2017年
JST資料番号:
D0245B
ISSN:
0030-3992
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)