文献
J-GLOBAL ID:201702240101341558
整理番号:17A0214215
物理的厚さ1x nm強誘電fZrOx負性容量FET【Powered by NICT】
Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs
著者 (14件):
Lee M. H.
(Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan)
,
Fan S.-T.
(Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan)
,
Tang C.-H.
(Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan)
,
Chen P.-G.
(Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan)
,
Chou Y.-C.
(Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan)
,
Chen H.-H.
(Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan)
,
Kuo J.-Y.
(Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan)
,
Xie M.-J.
(Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan)
,
Liu S.-N.
(Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan)
,
Liao M.-H.
(Department of Mechanical Engineering, National Taiwan University, Taipei, Taiwan)
,
Jong C.-A.
(National Nano Device Laboratories, Hsinchu, Taiwan)
,
Li K.-S.
(National Nano Device Laboratories, Hsinchu, Taiwan)
,
Chen M.-C.
(National Nano Device Laboratories, Hsinchu, Taiwan)
,
Liu C. W.
(Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
12.1.1-12.1.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)