文献
J-GLOBAL ID:201702240223371698
整理番号:17A1637973
典型的なラッチアップ免疫構造を有するSOI構造LIGBTのためのESDロバスト性の関心事【Powered by NICT】
ESD robustness concern for SOI-LIGBTs with typical latch-up immunity structures
著者 (4件):
Ye Ran
(National ASIC System Engineering Research Center, Southeast University, Nanjing, Jiangsu 210096, China)
,
Liu Siyang
(National ASIC System Engineering Research Center, Southeast University, Nanjing, Jiangsu 210096, China)
,
Sun Weifeng
(National ASIC System Engineering Research Center, Southeast University, Nanjing, Jiangsu 210096, China)
,
Hou Bo
(Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, Guangzhou, Guangdong 510610, China)
資料名:
Solid-State Electronics
(Solid-State Electronics)
巻:
137
ページ:
6-9
発行年:
2017年
JST資料番号:
H0225A
ISSN:
0038-1101
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)