文献
J-GLOBAL ID:201702240227656990
整理番号:17A0214309
エネルギー消費と高密度低の可能性ある電圧制御スピントロニクスメモリ(VoCSM)【Powered by NICT】
Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density
著者 (16件):
Yoda H.
(Corporate R & D Center, Toshiba Corporation, Kawasaki, Japan)
,
Shimomura N.
(Corporate R & D Center, Toshiba Corporation, Kawasaki, Japan)
,
Ohsawa Y.
(Corporate R & D Center, Toshiba Corporation, Kawasaki, Japan)
,
Shirotori S.
(Corporate R & D Center, Toshiba Corporation, Kawasaki, Japan)
,
Kato Y.
(Corporate R & D Center, Toshiba Corporation, Kawasaki, Japan)
,
Inokuchi T.
(Corporate R & D Center, Toshiba Corporation, Kawasaki, Japan)
,
Kamiguchi Y.
(Corporate R & D Center, Toshiba Corporation, Kawasaki, Japan)
,
Altansargai B.
(Corporate R & D Center, Toshiba Corporation, Kawasaki, Japan)
,
Saito Y.
(Corporate R & D Center, Toshiba Corporation, Kawasaki, Japan)
,
Koi K.
(Corporate R & D Center, Toshiba Corporation, Kawasaki, Japan)
,
Sugiyama H.
(Corporate R & D Center, Toshiba Corporation, Kawasaki, Japan)
,
Oikawa S.
(Corporate R & D Center, Toshiba Corporation, Kawasaki, Japan)
,
Shimizu M.
(Corporate R & D Center, Toshiba Corporation, Kawasaki, Japan)
,
Ishikawa M.
(Corporate R & D Center, Toshiba Corporation, Kawasaki, Japan)
,
Ikegami K.
(Corporate R & D Center, Toshiba Corporation, Kawasaki, Japan)
,
Kurobe A.
(Corporate R & D Center, Toshiba Corporation, Kawasaki, Japan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
27.6.1-27.6.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)