文献
J-GLOBAL ID:201702240506827419
整理番号:17A0362443
二重SOIデバイスの電磁感受性特性化【Powered by NICT】
Electromagnetic susceptibility characterization of double SOI device
著者 (14件):
Li B.
(Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China)
,
Li B.
(Key Laboratory of Silicon Devices and Technology, Chinese Academy of Sciences,Beijing, China)
,
Zhao K.
(Fudan Microelectronics Group, Shanghai, China)
,
Wu J.
(College of Electronics and Engineering, National University of Defense Technology, Changsha, China)
,
Wu J.
(Tianjin Binhai Civil-military Integrated Innovation Institute, Tianjin, China)
,
Zhao X.
(Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China)
,
Zhao X.
(Key Laboratory of Silicon Devices and Technology, Chinese Academy of Sciences,Beijing, China)
,
Su J.
(College of Electronics and Engineering, National University of Defense Technology, Changsha, China)
,
Gao J.
(Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China)
,
Gao J.
(Key Laboratory of Silicon Devices and Technology, Chinese Academy of Sciences,Beijing, China)
,
Gao C.
(Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China)
,
Gao C.
(Key Laboratory of Silicon Devices and Technology, Chinese Academy of Sciences,Beijing, China)
,
Luo J.
(Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China)
,
Luo J.
(Key Laboratory of Silicon Devices and Technology, Chinese Academy of Sciences,Beijing, China)
資料名:
Microelectronics Reliability
(Microelectronics Reliability)
巻:
64
ページ:
168-171
発行年:
2016年
JST資料番号:
C0530A
ISSN:
0026-2714
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)