文献
J-GLOBAL ID:201702240579807741
整理番号:17A1238012
III-窒化物合金半導体中の貫通転位の電子構造に及ぼす原子配列の影響:第一原理研究【Powered by NICT】
Effects of atomic arrangements on electronic structures of threading dislocations in III-nitride alloy semiconductors: A first-principles study
著者 (4件):
Akiyama Toru
(Department of Physics Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan)
,
Sakaguchi Ryohei
(Department of Physics Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan)
,
Nakamura Kohji
(Department of Physics Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan)
,
Ito Tomonori
(Department of Physics Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507, Japan)
資料名:
Physica Status Solidi. B. Basic Solid State Physics
(Physica Status Solidi. B. Basic Solid State Physics)
巻:
254
号:
8
ページ:
null
発行年:
2017年
JST資料番号:
C0599A
ISSN:
0370-1972
CODEN:
PSSBBD
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)