文献
J-GLOBAL ID:201702240690518870
整理番号:17A0414397
65nm CMOSにおける適応バイアス型60GHz Doherty電力増幅器【Powered by NICT】
Adaptively Biased 60-GHz Doherty Power Amplifier in 65-nm CMOS
著者 (5件):
Chen Shichang
(Key Lab of RF Circuits and Systems of the Ministry of Education of China, Hangzhou Dianzi University, Hangzhou, China)
,
Wang Gaofeng
(Key Lab of RF Circuits and Systems of the Ministry of Education of China, Hangzhou Dianzi University, Hangzhou, China)
,
Cheng Zhiqun
(Key Lab of RF Circuits and Systems of the Ministry of Education of China, Hangzhou Dianzi University, Hangzhou, China)
,
Qin Pei
(Department of Electronic Engineering, State Key Laboratory of Millimeter Waves, City University of Hong Kong, Hong Kong)
,
Xue Quan
(Department of Electronic Engineering, State Key Laboratory of Millimeter Waves, City University of Hong Kong, Hong Kong)
資料名:
IEEE Microwave and Wireless Components Letters
(IEEE Microwave and Wireless Components Letters)
巻:
27
号:
3
ページ:
296-298
発行年:
2017年
JST資料番号:
W0099A
ISSN:
1531-1309
CODEN:
IMWCBJ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)