文献
J-GLOBAL ID:201702240928918291
整理番号:17A1346415
ReRAMクロスバーアレイの最悪読取シナリオに関する研究【Powered by NICT】
Investigation on the Worst Read Scenario of a ReRAM Crossbar Array
著者 (5件):
Youn Yelim
(LG electronics, Seoul, South Korea)
,
Kim Kwangmin
(Department of Electrical Engineering, Pohang University of Science and Technology, Pohang, South Korea)
,
Sim Jae-Yoon
(Department of Electrical Engineering, Pohang University of Science and Technology, Pohang, South Korea)
,
Park Hong-June
(Department of Electrical Engineering, Pohang University of Science and Technology, Pohang, South Korea)
,
Kim Byungsub
(Department of Electrical Engineering, Pohang University of Science and Technology, Pohang, South Korea)
資料名:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
(IEEE Transactions on Very Large Scale Integration (VLSI) Systems)
巻:
25
号:
9
ページ:
2402-2410
発行年:
2017年
JST資料番号:
W0516A
ISSN:
1063-8210
CODEN:
ITCOB4
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)