文献
J-GLOBAL ID:201702241109672346
整理番号:17A1036310
DRAM技術のためのBCAT過程における局所変動の研究【Powered by NICT】
Investigation on the local variation in BCAT process for DRAM technology
著者 (5件):
Jeon Sanghyeon
(Yield Enhancement Team, Memory Division, Samsung Electronics Co. San#16 Banwol-Dong, Hwasung-City, Gyeonggi-Do, 445-701, Republic of Korea)
,
Choi Jaehyun
(Yield Enhancement Team, Memory Division, Samsung Electronics Co. San#16 Banwol-Dong, Hwasung-City, Gyeonggi-Do, 445-701, Republic of Korea)
,
Jung Hyuck-chai
(Yield Enhancement Team, Memory Division, Samsung Electronics Co. San#16 Banwol-Dong, Hwasung-City, Gyeonggi-Do, 445-701, Republic of Korea)
,
Kim Senyung
(Yield Enhancement Team, Memory Division, Samsung Electronics Co. San#16 Banwol-Dong, Hwasung-City, Gyeonggi-Do, 445-701, Republic of Korea)
,
Lee Taewoo
(Yield Enhancement Team, Memory Division, Samsung Electronics Co. San#16 Banwol-Dong, Hwasung-City, Gyeonggi-Do, 445-701, Republic of Korea)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
IRPS
ページ:
FA-4.1-FA-4.2
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)